Abstract We demonstrate the fabrication and characterization of silicon nanowire-based devices in metal-nanowire-metal configuration using direct current dielectrophoresis. The current-voltage characteristics of the devices were found rectifying. and their direction of rectification could be determined by voltage sweep direction due to the asymmetric Joule heating effect that occurred... https://www.chiggate.com/3m-speedglas-9002nc-welding-helmet-fashion/